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2 edition of Field emission current from silicon as a function of applied potential found in the catalog.

Field emission current from silicon as a function of applied potential

Richard Lee Perry

Field emission current from silicon as a function of applied potential

  • 394 Want to read
  • 24 Currently reading

Published .
Written in English

    Subjects:
  • Field emission.,
  • Silicon.

  • Edition Notes

    Statementby Richard Lee Perry.
    The Physical Object
    Pagination196 leaves, bound :
    Number of Pages196
    ID Numbers
    Open LibraryOL14301401M

    Definition. The work function W for a given surface is defined by the difference = − −, where −e is the charge of an electron, ϕ is the electrostatic potential in the vacuum nearby the surface, and E F is the Fermi level (electrochemical potential of electrons) inside the material. The term −eϕ is the energy of an electron at rest in the vacuum nearby the surface. The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of are devices with three terminals: source, gate, and control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.. FETs are also known as unipolar transistors since they involve.


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Field emission current from silicon as a function of applied potential by Richard Lee Perry Download PDF EPUB FB2

Field emission current from silicon as a function of applied potentialAuthor: Richard Lee Perry. Field emission from the surface potential well of silicon covered with a thin oxide layer is modelled using a conduction band effective potential and effective mass of the oxide.

Based on an exact solution of the Schrödinger equation under the application of a linear potential field, the emission current density is represented by an Airy by: Perry, unpublished Ph.D. dissertation, “Field Emission Current from Silicon as a Function of Applied Potential,” Oregon State University (), Appendix C.

Available from University Microfilms, Inc., Cited by: 7. The properties of a silicon surface can be changed significantly when an intense electric field is applied to the surface. The difference of the field emission between metal and silicon are discussed.

The quantum well arises when band bending of silicon confines the electrons to a narrow surface region. A general boundary condition for the study of field emission from silicon is presented Cited by: 5. Download PDF: Sorry, we are unable to provide the full text but you may find it at the following location(s): (external link).

A common method for estimating current from semiconductor field emission is to assume that the potential inside the semiconductor is the same as that which would occur if no current were emitted [zero emitted current approximation (ZECA)], and then to use the calculated density at the surface in a standard Fowler–Nordheim analysis familiar from metallic field emission by: In Sectionthe field emission current from both the bulk with the continuum en- ergy and the potential well with the quantized energy is calculated.

To compare the result presented here with that of the conventional FN theory, the field emission current from silicon is Cited by: 5. ELSEVIER Applied Surface Science 93 () applied surface science Field emission from the surface quantum well of silicon Qing-An Huang Microelectronics Center, Southeast University, NanjingChina Received 11 April ; accepted for publication 8 August Abstract The quantum well arises because the band bending of silicon confines the electrons to a narrow surface region Cited by: A one-dimensional potential profile during field emission for the silicon field emitter covered with a thin oxide is shown in Fig.

electrons will be emitted from the conduction band through the thin oxide when a voltage corresponding to the initial field F c is applied to the surface of the silicon emitter. Some of these electrons may be captured by electron by: 3. Field emission - also called Fowler-Nordheim tunneling - is the process whereby electrons tunnel through a barrier in the presence of a high electric field.

This quantum mechanical tunneling process is an important mechanism for thin barriers as those in metal-semiconduictor junctions on. François Léonard, in The Physics of Carbon Nanotube Devices, Publisher Summary.

The theory of field emission was originally developed by Fowler and Nordheim, and has since been refined to include effects such as details of the tunneling potential and material-specific density of states. However, the basic aspects of the field emission can be captured from a simple theory of tunneling.

current, referred as tunneling current, and the phenomenon is referred to as cold field emission. Typically, the potential barrier is a near rectangular shape at low field, and tunneling across this rectangular shaped barrier is referred to as direct tunneling) However, with the increase of Cited by: 2.

Request PDF | Electroluminescence spectra of porous silicon as a function of the applied voltage | The spectra of light emission from a separate emission center in porous silicon contained in. Field electron emission (also known as field emission (FE) and electron field emission) is emission of electrons induced by an electrostatic field.

The most common context is field emission from a solid surface into vacuum. However, field emission can take place from solid or liquid surfaces, into vacuum, air, a fluid, or any non-conducting or weakly conducting dielectric. The anode current of approximately 6 µA was obtained at 32 to 33 V for the 35 and 50 nm gap widths, respectively.

These results show that the emission current rapidly increases after the turn-on voltage is applied. The emission current from the lateral emitters is Author: J. Rouhi, F.S.

Husairi, Kevin Alvin Eswar, M.H. Mamat, Salman A.H. Alrokayan, Haseeb A. Khan, M. Rus. Photon assisted field emission from a silicon emitter Article in Solid-State Electronics 45(6) June with 36 Reads How we measure 'reads'.

I am in need of field emission miniature electron source of dimension( mm diameter emission area and few mm long) which could generate few micro-amp of current at V of applied. Field emission current calculations from semiconductors typically rely on the assumptions that the emitted current is negligible and that the band bending at the surface may be calculated via Poisson’s equation with a Fermi–Dirac momentum distribution of electrons [the zero emitted current approximation (ZECA)].

This approach cannot take into account complications due to quantum Cited by: 1. Introduction. Field emission devices, with efficient electron transport in vacuum medium, have high-speed and high-power potential.

But, translating this high-power potential into reality has been hindered by issues such as over-heating of emitter tips owing to material properties, non-uniform current density over a large emitter array, and insulator breakdown at high by: The measurement of field electron emission of the crystalline silicon film indicates that the threshold field is about V/μm and the emission is reproducible in the emission region.

View Show. The silicon-based field emission devices are potential electron sources 1,2, which can be applied in high energy accelerators, electron microscopes, X-ray sources, field emission (FE) light Cited by: The authors investigated the Nottingham effect of an n-type silicon semiconductor cathode in a quest for a practical solid-state cooler.

The dependence of field emission cooling on the carrier. High mobilities are required in order for the carriers not to be re-captured (d) electron/hole emission and capture rates as a function of applied field for the QDiP system.

Above MV cm −1 Cited by: Transmission coefficient and field emission current in a silicon vacuum nanostructure with a pyramidal cathode were calculated as a function of applied voltage, size of the cathode and distance bet Author: A.

Trafimenko, D. Podryabinkin, A. Danilyuk. A novel method for the high-frequency modulation of a semiconductor field emitter array (FEA), as needed by compact high power microwave and millimeter wave tubes, is qualitatively analyzed.

The model examines a FEA held at the threshold of emission by an applied gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor. Initial measurements were of the field emission current as a function of the applied potential at vacuum pressures of approximately 70 mTorr in unconditioned atmospheric air for devices with nominal electrode gaps of ±±±± and ± by:   The field emission characteristics (field emission current density (J) as a function of applied electric field (E)) at a sample to cathode distance of Cited by: Thermionic emission is the liberation of electrons from an electrode by virtue of its temperature (releasing of energy supplied by heat).

This occurs because the thermal energy given to the carrier overcomes the work function of the material. The charge carriers can be electrons or ions, and in older literature are sometimes referred to as thermions.

Femtosecond ultrabright electron sources with spatially structured emission are an enabling technology for free-electron lasers, compact coherent X-ray sources, electron diffractive imaging, and attosecond science. In this work, we report the design, modeling, fabrication, and experimental characterization of a novel ultrafast optical field emission cathode comprised of a large (> tips Cited by: field (i.e.

the macroscopic electric field for an emission current density of 10 μA/cm2) in the range ~ – 6 V/μm has been reported on large-area samples (typical sample area larger than 1 mm 2) using a parallel plate configuration.

9,10,13, A stable milliampere-level field emission. The time to polarize the semiconductor equals to first order the dielectric relaxation time, t = r e s, which is typically of the order of fs.A measurement of the barrier lowering as a function of the electric field has been obtained from photoelectric measurements on Au-silicon Schottky barriers and yielded a relative dielectric constant of e s /e 0 = 12 +/- The field emission from emitters can be described by the well-known FN tunneling, where the emission current (I), as a function of the local field (F) at the tip surface of emitters, is given by I= C(F2/Φ)exp(-BΦ3/2/F), where C and B are constants (B = × VeV-3/2m-1, obtained from quantum mechanics derivations), and Φ is the work function of emitter in eV.

As shown in Fig. 4, the typical field emission current density (J) on the applied electric field (E) (J-E) curves for SiC nanowires were presented. The turn-on field of SiC nanowire emitters, which was conventionally defined as the E obtained with the J of 10 μA/cm 2, 8 by: 7.

Highly oriented SiC porous nanowire (NW) arrays on Si substrate have been achieved via in situ carbonizing aligned Si NW arrays standing on Si substrate. The resultant SiC NW arrays inherit the diameter and length of the mother Si NW arrays.

Field emission measurements show that these oriented SiC porous NW arrays are excellent field emitter with large field emission current denstity at very Cited by: @article{osti_, title = {Numerical simulation of field emission from silicon}, author = {Jensen, K.L.

and Ganguly, A.K.}, abstractNote = {A common method for estimating current from semiconductor field emission is to assume that the potential inside the semiconductor is the same as that which would occur if no current were emitted [zero emitted current approximation (ZECA)], and then to.

Charles E. Hunt and W. Dawson Kesling, FIELD PENETRATION, ELECTRON SUPPLY AND EFFECTIVE WORK FUNCTION IN SEMICONDUCTOR FIELD-EMISSION CATHODES, Proceedings of the 8th International Vacuum Microelectronics Conference, Portland, OR, July Aug.

3, p(). Stable Field Emission from Nanoporous Silicon Carbide Myung-Gyu Kang1,2, Henri Lezec1, exponentially dependent on the emitter’s work function, the applied electric field E, in these initial studies raises the realistic possibility of field emitters as a potential replacement.

Field Emission. Field emission is a process of emitting electrons from conducting surfaces due to a strong external electric field that is applied in the direction normal to the surface (Figure ). As we know from our study of electric fields in earlier chapters, an applied external electric field causes the electrons in a conductor to move.

This document presents the results of Phase I of the Field Emitter Array RF Amplifier Development Project. The primary goal of the Phase I performance period was the development of field emission cathodes with the following characteristics: 5 mA total emission current, 5 A/sq cm current density, operation at an applied voltage of less than V, greater than 1 hour lifetime, and emission Author: W.

Devereux Palmer, Gary E. McGuire. Nordheim equation that relates the field-emitted current to the applied potential and the emitter work-function and curvature). Field-emission current and voltage measurements were made, enabling an approximate value of the average radius of curvature to be obtained with the help of an assumed work-function value.

The values of curvature. Field emission was first observed in by R. Wood of the USA. InR. Millikan and C. Lauritsen established that the logarithm of the field emission current density j is linearly dependent on the reciprocal 1/E of the electric field strength.

In andR. Fowler and L. Nordheim put forth a theoretical explanation of field. Note, at fields up to 10 8 −1, the enhanced emission comes from Schottky barrier lowering due to image charges, where the work function is reduced by an applied field Cited by: 1./ New packaging method of field emission display using silicon-to-ITO coated glass bonding.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. editor / Anon. Piscataway, NJ, United States: IEEE, pp. Author: Jee-Won Jeong, Byeong-Kwon Ju, Woo-Beom Choi, D.

Leel, Yun-Hi Lee, Nam-Yang Lee, Seong-Jae Jung, Doo.